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25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system

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© The Institution of Engineering and Technology
Published

A high-performance 1.3 µm InGaAlAs electroabsorption modulator integrated with a DFB laser for the metro-area 100 Gbit/s Ethernet system (100GBASE-LR4 and -ER4) has been developed. 40 km transmission under 25 Gbit/s operation on singlemode fibre that is required for 100GBASE-ER4 application at 40°C is demonstrated for the first time.

Inspec keywords: local area networks; semiconductor lasers; electroabsorption; distributed feedback lasers; gallium compounds; III-V semiconductors; modulators; indium compounds

Other keywords: singlemode fibre; Ethernet system; InGaAlAs; DFB laser; size 1.3 mum; electroabsorption modulator

Subjects: Semiconductor lasers; Modulators, demodulators, discriminators and mixers; Lasing action in semiconductors

References

    1. 1)
      • Hayashi, H., Makino, S., Kitatani, T., Shiota, T., Shinoda, K., Tanaka, S., Aoki, M., Sasada, N., Naoe, K.: `A first uncooled (25 to 85°C) 43-Gbps lightsource based on InGaAlAs EA/DFB laser technology', Proc. ECOC'08, 2008, We.3.C.3.
    2. 2)
      • Kobayashi, W., Arai, M., Yamanaka, T., Fujiwara, N., Fujisawa, T., Ishikawa, M., Tsuzuki, K., Shibata, Y., Kondo, Y., Kano, F.: `Extended operating temperature range of 125°C (−25°C to 100°C) of 10-Gbit/s, 1.55-µm electroabsorption modulator integrated DFB laser for 80-km SMF transmission', Proc. OFC'09, 2009, OThT4.
    3. 3)
      • Makino, S., Hayashi, H., Shinoda, K., Kitatani, T., Shiota, T., Tanaka, S., Aoki, M., Naoe, K., Sasada, N., Yamauchi, S., Shishikura, M., Hatano, T., Morohashi, N., Inoue, H.: `Uncooled CWDM 25-Gbps EA/DFB lasers for cost-effective 100-Gbps Ethernet transceiver over 10-km SMF transmission', Proc. OFC'08, 2008, PDP21.
    4. 4)
      • http://www.ieee802.org/3/ba/.
    5. 5)
    6. 6)
      • Kobayashi, W., Arai, M., Fujiwara, N., Fujisawa, T., Tsuzuki, K., Ito, T., Kondo, Y., Kano, F.: `40 Gbit/s uncooled (−15°C to 80°C) operation of a 1.55-µm, InGaAlAs, electroabsorption modulated laser for very short reach applications', Proc. 21st Indium Phosphide and Related Materials Conf. (IPRM), 2009, ThB1.2.
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