The design, fabrication and characterisation of a dual gate lateral inversion layer emitter transistor (DGLILET) is described. It resembles an anode shorted LIGBT in its structure but has two MOS gates. The second gate controls injection of minority carriers and the resulting conductivity modulation in the device. Owing to this feature the DGLILET can operate as a bipolar device in the on-state and a majority carrier device in switching, causing a low on-state drop combined with low switching losses. The reduction in overall losses makes the device attractive for use in power and high voltage integrated circuits. In addition, the snapback effect present in the anode shorted LIGBT is effectively removed in the DGLILET resulting in a versatile power-switching device. An integrated gate drive circuit has also been designed to drive the two gates of the DGLILET.