Issue 46, 2023

Oxygen-bridged boron derivatives as electron transport and thermally activated delayed fluorescence host materials for high-performance phosphorescent organic light-emitting diodes

Abstract

Oxygen-bridged boron (BO) derivatives, 3,11-di(9H-carbazol-9-yl)-5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene (p-BO-2Cz) and 2,12-di(9H-carbazol-9-yl)-5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene (m-BO-2Cz), were successfully developed as n-type (electron transport type) hosts with thermally activated delayed fluorescence (TADF) characteristics. These hosts were created by introducing an electron-donating carbazole unit at the meta- and para-positions of the boron in the BO core for p-BO-2Cz and m-BO-2Cz, respectively. Notably, p-BO-2Cz exhibited a higher triplet energy in solid state than m-BO-2Cz, making it suitable for various device applications. In terms of device performance, p-BO-2Cz demonstrated high external quantum efficiency (EQE) of 24.0% and 28.1% in blue and green phosphorescent devices, respectively. On the other hand, m-BO-2Cz exhibited a high EQE of 26.5% only in the green phosphorescent device. These results emphasize the significance of the carbazole substitution position in the BO core, as it plays a critical role in determining the performance of phosphorescent devices. Overall, the introduction of carbazole-modified BO derivatives as electron transport and TADF-type hosts in mixed host systems was proven to be highly effective for PhOLEDs.

Graphical abstract: Oxygen-bridged boron derivatives as electron transport and thermally activated delayed fluorescence host materials for high-performance phosphorescent organic light-emitting diodes

Supplementary files

Article information

Article type
Paper
Submitted
31 Aug 2023
Accepted
05 Nov 2023
First published
07 Nov 2023

J. Mater. Chem. C, 2023,11, 16288-16296

Oxygen-bridged boron derivatives as electron transport and thermally activated delayed fluorescence host materials for high-performance phosphorescent organic light-emitting diodes

S. H. Jeong, J. S. Im, D. R. Lee, H. J. Ahn, J. Y. Kim, J. Baek and J. Y. Lee, J. Mater. Chem. C, 2023, 11, 16288 DOI: 10.1039/D3TC03142J

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