Issue 37, 2023

Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide

Abstract

PrBi, a sister member of the rare-earth monopnictide family, is an excellent candidate for studying extreme magnetoresistance and nontrivial topological electronic states. In this study, we perform angular magnetoresistance measurements as well as bulk and surface band structure calculations on this compound. PrBi's magnetoresistance is revealed to be significantly angle-dependent and shows a fourfold symmetry as always observed in the nonmagnetic isostructural counterparts, including LaSb, LaBi, and LuBi. Its angular magnetoresistance can be reproduced well using the semiclassical two-band model. The deduced parameters suggest that PrBi hosts an elongated electron pocket with a mobility anisotropy of ∼3.13 and is slightly uncompensated in its carrier concentration. Our bulk and surface band structure calculations confirm the anisotropic electronic features. Moreover, we reveal that a nodal-line-shaped surface state appears at the [X with combining macron] point, and is associated with the quadratic dispersion along the [capital Gamma, Greek, macron][X with combining macron] direction, and the linear type-I Dirac dispersion along the [X with combining macron][M with combining macron] direction. Owing to the type-I Dirac dispersion feature, PrBi could serve as a promising material platform for studying many unexpected physical properties, such as the highly anisotropic transport and valley polarization of electrons.

Graphical abstract: Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide

Supplementary files

Article information

Article type
Paper
Submitted
22 Jul 2023
Accepted
05 Sep 2023
First published
05 Sep 2023

Phys. Chem. Chem. Phys., 2023,25, 25573-25580

Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide

F. Tang, Y. Chen, X.-L. Ge, W.-Z. Meng, Z.-D. Han, B. Qian, W. Zhao, X.-F. Jiang, Y. Fang and S. Ju, Phys. Chem. Chem. Phys., 2023, 25, 25573 DOI: 10.1039/D3CP03480A

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