A^VB^VIC^VII ternary compounds with a special structure show strong anisotropy, which can be attributed to the double chains along the b axis. The crystals have attracted widespread interest because of their unique photoelectricity and piezoelectricity properties. However, the A^VB^VIC^VII crystals are limited by the difficulty to obtain large-sized single phase specimens. Herein, an alternative way to grow large A^VB^VIC^VII crystals using the physical vapor transport (PVT) method was reported. By tailoring the temperature gradient and growth temperature, centimeter-sized BiSeI, SbSeI and BiSeBr single crystals with a needle-like morphology were obtained and their optical and electrical properties were investigated. The as-grown BiSeBr and BiSeI crystals exhibited band gaps of 1.41 eV and 1.31 eV and resistivities of 0.25 and 28.30 Ω cm, respectively, and they can be classified as optoelectronic materials with low bulk resistivity and suitable band gaps. Additionally, a wider band gap of 1.66 eV was revealed for SbSeI, owing to the p-orbital of Sb contributing to the conduction band edge states, as well as large resistivity of 2.53 × 10⁶ Ω cm. These results indicated that PVT can be considered as an effective method for growing large-sized A^VB^VIC^VII single crystals, which can be further used to explore the unique properties of A^VB^VIC^VII compounds and meet the basic demands of their applications.