Issue 46, 2020

Construction of planar-type defect-engineered metal–organic frameworks with both mixed-valence sites and copper-ion vacancies for photocatalysis

Abstract

This manuscript presents a facile paradigm for controllably developing planar-type defect-engineered metal–organic frameworks (DEMOFs) by systematically doping reductive defect linker vanillin (VAN) during the synthesis of HKUST-1. The as-prepared DEMOF variants were designed to carry copper-ion vacancies and mixed-valence Cu1+/Cu2+ sites on the {220} and {111} planes of NR-HKUST-1 and {100}, {110} and {111} planes of NS-HKUST-1 via reversible and irreversible growth modes. The photocatalysis results indicate that the mixed-valence Cu1+/Cu2+ sites (with special electronic properties) in planar-type defective HKUST-1 have a greater effect on performance improvement than copper-ion vacancies (with special steric properties). The HOMO–LUMO gap of the Cu1+/Cu2+ unit is significantly reduced to promote the separation of photogenerated electron–hole pairs and overcome the transfer resistance of electron–hole pairs, leading to an outstanding catalytic activity (3784.2 μmol g−1 h−1). This strategy of creating mixed-valence sites and vacancies by doping a reductive defect linker can provide a new way to prepare catalysts with higher photocatalytic activity.

Graphical abstract: Construction of planar-type defect-engineered metal–organic frameworks with both mixed-valence sites and copper-ion vacancies for photocatalysis

Supplementary files

Article information

Article type
Paper
Submitted
17 Aug 2020
Accepted
28 Oct 2020
First published
14 Nov 2020

J. Mater. Chem. A, 2020,8, 24477-24485

Construction of planar-type defect-engineered metal–organic frameworks with both mixed-valence sites and copper-ion vacancies for photocatalysis

Y. Guo, C. Feng, S. Wang, Y. Xie, C. Guo, Z. Liu, N. Akram, Y. Zhang, Y. Zhao and J. Wang, J. Mater. Chem. A, 2020, 8, 24477 DOI: 10.1039/D0TA08085C

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