A self-powered photodetector based on two-dimensional boron nanosheets

Dingtao Ma; Rui Wang; Jinlai Zhao; Qianyuan Chen; Leiming Wu; Delong Li; Liumei Su; Xiantao Jiang; Zhengqian Luo; Yanqi Ge; Jianqing Li; Yupeng Zhang; Han Zhang

doi:10.1039/D0NR00005A

A self-powered photodetector based on two-dimensional boron nanosheets†

Dingtao Ma,^a Rui Wang,^bd Jinlai Zhao,^ab Qianyuan Chen,^c Leiming Wu,

^a Delong Li,^b Liumei Su,^b Xiantao Jiang,^b Zhengqian Luo,

^d Yanqi Ge,^b Jianqing Li,^a Yupeng Zhang

*^b and Han Zhang

*^b

Author affiliations

* Corresponding authors

^a Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China

^b Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China
E-mail: ypzhang@szu.edu.cn, hzhang@szu.edu.cn

^c School of Physics and Technology, and MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072, China

^d Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China

Abstract

Owing to their intriguing characteristics, the ongoing pursuit of emerging mono-elemental two-dimensional (2D) nanosheets beyond graphene is an exciting research area for next-generation applications. Herein, we demonstrate that highly crystalline 2D boron (B) nanosheets can be efficiently synthesized by employing a modified liquid phase exfoliation method. Moreover, carrier dynamics has been systematically investigated by using femtosecond time-resolved transient absorption spectroscopy, demonstrating an ultrafast recovery speed during carrier transfer. Based on these results, the optoelectronic performance of the as-synthesized 2D B nanosheets has been investigated by applying them in photoelectrochemical (PEC)-type and field effect transistor (FET)-type photodetectors. The experimental results revealed that the as-fabricated PEC device not only exhibited a favourable self-powered capability, but also a high photoresponsivity of 2.9–91.7 μA W⁻¹ in the UV region. Besides, the FET device also exhibited a tunable photoresponsivity in the range of 174–281.3 μA W⁻¹ under the irradiation of excited light at 405 nm. We strongly believe that the current work shall pave the path for successful utilization of 2D B nanosheets in electronic and optoelectronic devices. Moreover, the proposed method can be utilized to explore other mono-elemental 2D nanomaterials.

Nanoscale

A self-powered photodetector based on two-dimensional boron nanosheets†

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A self-powered photodetector based on two-dimensional boron nanosheets

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