Issue 51, 2019, Issue in Progress
From the journal:

RSC Advances

Enhanced photocurrent in organic photodetectors by the tunneling effect of a hafnium oxide thin film as an electron blocking layer†

Chan Hyuk Ji,a   Ji Young Lee,a   Kee Tae Kima  and  Se Young Oh ORCID logo *a  

* Corresponding authors

a Dept. of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
E-mail: syoh@sogang.ac.kr

Abstract

To achieve high detectivity of organic photodetectors (OPDs), we investigated hafnium oxide (HfO2) as an electron blocking layer in an attempt to obtain a low leakage current and high photocurrent by the tunneling effect. The prepared devices consisted of indium tin oxide (ITO)/HfO2/(poly(3-hexylthiophene-2,5-diyl)[P3HT]:PC60BM)/Yb/Al. To explore the tunneling effect in a hafnium oxide thin film, we fabricated a thin film using successive ionic layer deposition. The results for hafnium oxide were compared with those for aluminum oxide and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS). We found that hafnium oxide results in a low leakage current and high photocurrent owing to the tunneling effect in the OPDs. The resulting detectivity of 1.76 × 1012 Jones for a film thickness of 5.5 nm and bandwidth of ∼100 kHz is suitable for commercialization.

Graphical abstract: Enhanced photocurrent in organic photodetectors by the tunneling effect of a hafnium oxide thin film as an electron blocking layer

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Article information

DOI
https://doi.org/10.1039/C9RA06230K
Article type
Paper
Submitted
10 Aug 2019
Accepted
18 Sep 2019
First published
23 Sep 2019
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2019,9, 29993-29997

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Enhanced photocurrent in organic photodetectors by the tunneling effect of a hafnium oxide thin film as an electron blocking layer

C. H. Ji, J. Y. Lee, K. T. Kim and S. Y. Oh, RSC Adv., 2019, 9, 29993 DOI: 10.1039/C9RA06230K

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