Issue 27, 2017

Enhanced photoresponse of ZnO quantum dot-decorated MoS2 thin films

Abstract

Transition metal dichalcogenides (TMDs) have been attracting attention because of their applications in optoelectronics and photo-detection. A widely used TMD semiconductor is molybdenum disulfide (MoS2), which has tremendous applications because of its tunable bandgap and high luminescence quantum efficiency. This paper reports on high photo responsivity (Rλ ∼ 1913 A W−1) of MoS2 photodetector by decorating a thin layer of zinc oxide (ZnO) quantum dots (ZnO-QDs) on MoS2. Results show that Rλ increases dramatically to 2267 A W−1 at Vbg = 30 V. The high response of ZnO-QDs/MoS2 heterostructures is attributed to a number of factors, such as effective charge transfer between ZnO-QDs and MoS2 surface and re-absorption of light photon resulting in production of electron–hole pairs.

Graphical abstract: Enhanced photoresponse of ZnO quantum dot-decorated MoS2 thin films

Supplementary files

Article information

Article type
Paper
Submitted
28 Jan 2017
Accepted
09 Mar 2017
First published
17 Mar 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 16890-16900

Enhanced photoresponse of ZnO quantum dot-decorated MoS2 thin films

G. Nazir, M. F. Khan, I. Akhtar, K. Akbar, P. Gautam, H. Noh, Y. Seo, S. Chun and J. Eom, RSC Adv., 2017, 7, 16890 DOI: 10.1039/C7RA01222E

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