Issue 91, 2016, Issue in Progress
From the journal:

RSC Advances

Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors†

Chia-Liang Tsai,‡a   Kamani Sudhir K Reddy,‡b   Chen-Yu Yeh,*b   Chin-Li Wang,c   Ching-Yao Lin,*c   Hung-Ju Yen,a   Ming-Chi Tsaia  and  Guey-Sheng Liou*a  

* Corresponding authors

a Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec., Taipei 10617, Taiwan
E-mail: gsliou@ntu.edu.tw

b Department of Chemistry and Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 402, Taiwan
E-mail: cyyeh@dragon.nchu.edu.tw

c Department of Applied Chemistry, National Chi Nan University, Puli, Nantou 54561, Taiwan
E-mail: cyl@ncnu.edu.tw

Abstract

A new class of porphyrin-containing polyimides, ZnPor-s-DSDA, ZnPor-t-DSDA, Por-s-DSDA and Por-t-DSDA, were synthesized from porphyrin-containing diamines and 3,3′,4,4′-diphenylsulfone tetracarboxylic dianhydride for resistor-type memory applications. The effect of the linkage and zinc metal was investigated by electrochemistry, molecular simulations, and memory behaviors. The memory devices with different retention times derived from polymers ZnPor-s-DSDA (WORM, >3 h) and ZnPor-t-DSDA (DRAM, 30 s) demonstrated the importance of the linkage effect, and the insulation property of polyimides Por-s-DSDA and Por-t-DSDA also implies a crucial memory behavior by metal chelation.

Graphical abstract: Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors

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Article information

DOI
https://doi.org/10.1039/C6RA18986E
Article type
Paper
Submitted
26 Jul 2016
Accepted
30 Aug 2016
First published
31 Aug 2016

RSC Adv., 2016,6, 88531-88537

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Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors

C. Tsai, K. Sudhir K Reddy, C. Yeh, C. Wang, C. Lin, H. Yen, M. Tsai and G. Liou, RSC Adv., 2016, 6, 88531 DOI: 10.1039/C6RA18986E

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