Issue 1, 2017
From the journal:

Nanoscale Horizons

High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions†

Meng-Lin Tsai,ab   Ming-Yang Li,cd   Yumeng Shi,c   Lih-Juann Chen,*b   Lain-Jong Li*c  and  Jr-Hau He*a  

* Corresponding authors

a Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia
E-mail: jrhau.he@kaust.edu.sa

b Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
E-mail: ljchen@mx.nthu.edu.tw

c Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia
E-mail: lance.li@kaust.edu.sa

d Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, Republic of China

Abstract

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

Graphical abstract: High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

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Article information

DOI
https://doi.org/10.1039/C6NH00075D
Article type
Communication
Submitted
26 Apr 2016
Accepted
12 Oct 2016
First published
28 Oct 2016

Nanoscale Horiz., 2017,2, 37-42

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High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

M. Tsai, M. Li, Y. Shi, L. Chen, L. Li and J. He, Nanoscale Horiz., 2017, 2, 37 DOI: 10.1039/C6NH00075D

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