Issue 17, 2015

Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression

Abstract

Ga doped In2O3-based thermoelectric materials were prepared by spark plasma sintering (SPS) using sintered powders in the low temperature solid phase. The solubility of Ga in In2O3 is about 10 at%, much larger than other elements such as Ge, Ce, etc. The larger solubility of Ga allows us to optimize the thermal and electrical transport properties of Ga doped In2O3 in a wider window. While tuning the concentration of dopants, the thermoelectric performance of Ga doped In2O3 was enhanced through a synergistic approach combining band-gap engineering and phonon suppression. The power factor increases from ∼0.5 × 10−4 to ∼9.6 × 10−4 W mK−2 at 700 °C while thermal conductivity reduces from ∼4 to ∼2 W mK−1 at 700 °C in In1.9Ga0.1O3. The maximum ZT of 0.37, increased by a factor of 4 from the pristine In2O3, is achieved in In1.9Ga0.1O3 at 700 °C.

Graphical abstract: Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression

Supplementary files

Article information

Article type
Paper
Submitted
05 Feb 2015
Accepted
23 Mar 2015
First published
24 Mar 2015

Phys. Chem. Chem. Phys., 2015,17, 11229-11233

Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression

Y. Liu, W. Xu, D. Liu, M. Yu, Y. Lin and C. Nan, Phys. Chem. Chem. Phys., 2015, 17, 11229 DOI: 10.1039/C5CP00739A

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