Issue 21, 2015

Random lasing realized in n-ZnO/p-MgZnO core–shell nanowire heterostructures

Abstract

Well-aligned ZnO nanowire arrays have been prepared, and p-MgZnO has been deposited onto the nanowires to form core–shell heterostructures. Transmission electron microscopy confirms the formation of n-ZnO/p-MgZnO core–shell nanowire heterostructures. Under injection of a continuous current, random lasing with a threshold current of around 15 mA has been observed from the heterostructures. The low threshold may be due to the relatively high crystalline quality of the ZnO nanowires as well as the carrier confinement in the heterostructures.

Graphical abstract: Random lasing realized in n-ZnO/p-MgZnO core–shell nanowire heterostructures

Article information

Article type
Communication
Submitted
21 Mar 2015
Accepted
21 Apr 2015
First published
21 Apr 2015

CrystEngComm, 2015,17, 3917-3922

Author version available

Random lasing realized in n-ZnO/p-MgZnO core–shell nanowire heterostructures

Y. Lu, C. Shan, M. Jiang, G. Hu, N. Zhang, S. Wang, B. Li and D. Shen, CrystEngComm, 2015, 17, 3917 DOI: 10.1039/C5CE00572H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements