Microwave-assisted solution–liquid–solid growth of Ge1−xSnx nanowires with high tin content

Sven Barth; Michael S. Seifner; Johannes Bernardi

doi:10.1039/C5CC03639A

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Microwave-assisted solution–liquid–solid growth of Ge_1−xSn_x nanowires with high tin content†

Sven Barth,*^a Michael S. Seifner^a and Johannes Bernardi^b

Author affiliations

* Corresponding authors

^a Vienna University of Technology, Institute of Materials Chemistry, Getreidemarkt 9/BC/02, 1060 Vienna, Austria
E-mail: sven.barth@tuwien.ac.at

^b University Servicecenter for TEM (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Vienna, Austria

Abstract

A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge_1−xSn_x) nanowires with constant diameter along their axis was developed. Ge_1−xSn_x nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.

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Article information

DOI: https://doi.org/10.1039/C5CC03639A
Article type: Communication
Submitted: 01 May 2015
Accepted: 26 Jun 2015
First published: 29 Jun 2015

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Chem. Commun., 2015,51, 12282-12285

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Microwave-assisted solution–liquid–solid growth of Ge_1−xSn_x nanowires with high tin content

S. Barth, M. S. Seifner and J. Bernardi, Chem. Commun., 2015, 51, 12282 DOI: 10.1039/C5CC03639A

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Chemical Communications