Issue 82, 2014

Preparation and photoelectric property of a Cu2FeSnS4 nanowire array

Abstract

A single crystalline Cu2FeSnS4 nanowires array has been prepared via a convenient solution approach. Porous anodic aluminum oxide was used as a morphology directing template and played a significant role in the formation of single crystalline Cu2FeSnS4 nanowires. The as-prepared Cu2FeSnS4 nanowires are uniform with a [110] growth direction. Structure, morphology, composition and optical absorption properties of the as-prepared samples were characterized with X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy and UV-Vis spectrophotometry. The formation mechanism of Cu2FeSnS4 nanowires array has been discussed. Thin films prepared from Cu2FeSnS4 single crystalline nanowires displayed an obvious photoelectric response, suggesting their potential application as low cost solar absorber materials.

Graphical abstract: Preparation and photoelectric property of a Cu2FeSnS4 nanowire array

Article information

Article type
Paper
Submitted
18 Jun 2014
Accepted
09 Sep 2014
First published
09 Sep 2014

RSC Adv., 2014,4, 43720-43724

Preparation and photoelectric property of a Cu2FeSnS4 nanowire array

L. Shi and Y. Li, RSC Adv., 2014, 4, 43720 DOI: 10.1039/C4RA05878J

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