Issue 8, 2013
From the journal:

CrystEngComm

High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

Yong-Qiang Yu,ab   Lin-Bao Luo,*b   Zhi-Feng Zhu,ab   Biao Nie,b   Yu-Gang Zhang,ab   Long-Hui Zeng,b   Yan Zhang,ab   Chun-Yan Wu,b   Li Wangb  and  Yang Jiang*a  

* Corresponding authors

a School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
E-mail: apjiang@hfut.edu.cn

b School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
E-mail: luolb@hfut.edu.cn

Abstract

Ag-doped p-type ZnS nanoribbons (NRs) with a high hole concentration of 5.1 × 1018 cm−3 and high carrier mobility of 154.0 cm2 V−2 s−1 were synthesized by using silver sulfide (Ag2S) as the Ag source. Excellent ohmic contact to p-ZnS NR with specific contact resistivity as low as 5.6 × 10−7 Ω cm2 was achieved by using bilayer Cu (4 nm)–Au electrode, which according to the depth profiling X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analysis can help to form a thin Cu2S interfacial layer between the electrode. Based on the high quality ZnS NRs and achievement on ohmic contact, p–n photodiodes have been constructed from the p-ZnS nanoribbon (NR)–n-Si heterojunction with a response speed as high as ∼48 μs (rise time). Furthermore, the device also exhibits stable optoelectrical properties with high sensitivity to UV-visible-NIR light and an enhancement of responsivities of 1.1 × 103 AW−1 for 254 nm under a reverse bias of 0.5 V. These generality of the above results shows that the p-ZnS NR–n-Si heterojunction will have potential applications in future high-performance photodetectors.

Graphical abstract: High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

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Article information

DOI
https://doi.org/10.1039/C2CE26730F
Article type
Paper
Submitted
21 Oct 2012
Accepted
24 Nov 2012
First published
27 Nov 2012

CrystEngComm, 2013,15, 1635-1642

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High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

Y. Yu, L. Luo, Z. Zhu, B. Nie, Y. Zhang, L. Zeng, Y. Zhang, C. Wu, L. Wang and Y. Jiang, CrystEngComm, 2013, 15, 1635 DOI: 10.1039/C2CE26730F

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