Piezoelectrically active hydrothermal KNbO3 thin films

Albertus D. Handoko; Gregory K. L. Goh; Rong Xin Chew

doi:10.1039/C1CE05908D

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Piezoelectrically active hydrothermal KNbO₃ thin films†

Albertus D. Handoko,‡^a Gregory K. L. Goh*^a and Rong Xin Chew^a

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* Corresponding authors

^a Institute of Materials Research and Engineering, 3 Research Link, Singapore
E-mail: g-goh@imre.a-star.edu.sg
Fax: +65 6874 4657
Tel: +65 6874 8346

Abstract

In this study, a post-growth treatment has been developed for epitaxial KNbO₃ films grown hydrothermally at 200 °C so that they are ferroelectrically active. The treatment comprised of an O₂ plasma followed by thermal annealing that removed lattice hydroxyls and also reduced the concentration of oxygen vacancies. This lowered the leakage current sufficiently such that films could be poled to saturation. This has led to the first demonstration of piezoelectrically active KNbO₃ films grown hydrothermally.

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Article information

DOI: https://doi.org/10.1039/C1CE05908D
Article type: Paper
Submitted: 17 Jul 2011
Accepted: 21 Sep 2011
First published: 24 Oct 2011

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CrystEngComm, 2012,14, 421-427

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Piezoelectrically active hydrothermal KNbO₃ thin films

A. D. Handoko, G. K. L. Goh and R. X. Chew, CrystEngComm, 2012, 14, 421 DOI: 10.1039/C1CE05908D

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