Issue 27, 2010
From the journal:

Chemical Communications

Epitaxial graphene on 4H-SiC by pulsed electron irradiation†

Qingsong Huang,a   Xiaolong Chen,*a   Jun Liu,a   Wenjun Wang,a   Gang Wang,a   Wanyan Wang,a   Rong Yang,a   Yu Liua  and  Liwei Guoa  

* Corresponding authors

a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P.R. China
E-mail: chenx29@aphy.iphy.ac.cn
Fax: +86-10-82649646
Tel: +86-10-82649039

Abstract

Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.

Graphical abstract: Epitaxial graphene on 4H-SiC by pulsed electron irradiation

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Article information

DOI
https://doi.org/10.1039/C000175A
Article type
Communication
Submitted
06 Jan 2010
Accepted
18 May 2010
First published
07 Jun 2010

Chem. Commun., 2010,46, 4917-4919

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Epitaxial graphene on 4H-SiC by pulsed electron irradiation

Q. Huang, X. Chen, J. Liu, W. Wang, G. Wang, W. Wang, R. Yang, Y. Liu and L. Guo, Chem. Commun., 2010, 46, 4917 DOI: 10.1039/C000175A

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