Issue 46, 2009
From the journal:

Journal of Materials Chemistry

Solution processed invisible all-oxide thin film transistors

Keunkyu Song,a   Dongjo Kim,a   Xiang-Shu Li,b   Taewhan Jun,a   Youngmin Jeonga  and  Jooho Moon*a  

* Corresponding authors

a Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul, Korea
E-mail: jmoon@yonsei.ac.kr

b Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon, Korea

Abstract

We report on a fully transparent solution processed thin-film transistor (TFT) device with oxide semiconductor and oxide electrode. Selective doping into the sol–gel derived ZnO materials tailors the electrical properties to range from metallic to semiconducting characteristics. Integration of a spin-coated zinc tin oxide (ZTO) semiconductor with an ink-jet-printed zinc indium oxide (ZIO) electrode creates a transparent TFT with high performance and good transparency (∼90%). Use of the same ZnO-based oxide materials in a TFT allows for the formation of good electrical contacts characterized by low contact resistance, comparable to those with a vacuum-deposited Al electrode. Our results suggest that the solution-processed ZnO-based TFT has great potential to work as a building block for future printed transparent electronics.

Graphical abstract: Solution processed invisible all-oxide thin film transistors

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Article information

DOI
https://doi.org/10.1039/B912554J
Article type
Paper
Submitted
26 Jun 2009
Accepted
18 Sep 2009
First published
16 Oct 2009

J. Mater. Chem., 2009,19, 8881-8886

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Solution processed invisible all-oxide thin film transistors

K. Song, D. Kim, X. Li, T. Jun, Y. Jeong and J. Moon, J. Mater. Chem., 2009, 19, 8881 DOI: 10.1039/B912554J

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