Issue 31, 2019
From the journal:

Chemical Communications

Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal†

Keisuke Awaya, ORCID logo a   Akihide Takashiba,b   Takaaki Taniguchi,c   Michio Koinuma,a   Tatsumi Ishihara ORCID logo b  and  Shintaro Ida ORCID logo *a  

* Corresponding authors

a Graduate School of Science and Technology Kumamoto University, 2-39-1, Kurokami Chuo-ku, Kumamoto 860-8555, Japan
E-mail: ida-s@kumamoto-u.ac.jp

b Department of Applied Chemistry, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

c International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Abstract

A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

Graphical abstract: Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

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Article information

DOI
https://doi.org/10.1039/C9CC01039D
Article type
Communication
Submitted
04 Feb 2019
Accepted
19 Mar 2019
First published
22 Mar 2019

Chem. Commun., 2019,55, 4586-4588

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Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

K. Awaya, A. Takashiba, T. Taniguchi, M. Koinuma, T. Ishihara and S. Ida, Chem. Commun., 2019, 55, 4586 DOI: 10.1039/C9CC01039D

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