Nonstoichiometry induced broadband tunable photoluminescence of monolayer WSe2

Weitao Su; Yongguang Li; Leifeng Chen; Dexuan Huo; Kaixin Song; Xiwei Huang; Haibo Shu

doi:10.1039/C7CC07953B

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Nonstoichiometry induced broadband tunable photoluminescence of monolayer WSe₂†

Weitao Su,

*^a Yongguang Li,^a Leifeng Chen,^a Dexuan Huo,^a Kaixin Song,

^b Xiwei Huang^c and Haibo Shu

*^d

Author affiliations

* Corresponding authors

^a College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China
E-mail: suweitao@hdu.edu.cn

^b College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

^c Key Laboratory of RF Circuits and Systems (Hangzhou Dianzi University), Ministry of Education, Hangzhou, China

^d College of Optical and Electronic Technology, China Jiliang University, Hangzhou, China
E-mail: shu123hb@gmail.com

Abstract

A nonstoichiometric process by modulating the W/Se atomic ratio was employed to tune the excitonic PL band of monolayer WSe₂ from 810 nm to 690 nm. DFT calculations indicate that Se-rich conditions reduce the band gap, while Se-deficient conditions facilitate the increasing band gap and decreasing excitionic binding energy, which finally induces such broadband tuning of the PL band.

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Article information

DOI: https://doi.org/10.1039/C7CC07953B
Article type: Communication
Submitted: 16 Oct 2017
Accepted: 13 Dec 2017
First published: 13 Dec 2017

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Chem. Commun., 2018,54, 743-746

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Nonstoichiometry induced broadband tunable photoluminescence of monolayer WSe₂

W. Su, Y. Li, L. Chen, D. Huo, K. Song, X. Huang and H. Shu, Chem. Commun., 2018, 54, 743 DOI: 10.1039/C7CC07953B

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Chemical Communications