Issue 22, 2016
From the journal:

RSC Advances

Amorphous ZnO based resistive random access memory

Yong Huang,ab   Zihan Shen,ac   Ye Wu,a   Xiaoqiu Wang,b   Shufang Zhang,a   Xiaoqin Shia  and  Haibo Zeng*a  

* Corresponding authors

a Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
E-mail: zeng.haibo@njust.edu.cn

b Department of Fundamental Courses, Jinling Institute of Technology, Nanjing 211169, China

c College of Elite Education, Nanjing University of Science and Technology, Nanjing 210094, China

Abstract

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated. The Ag/a-ZnO/Pt RRAMs exhibit typical bipolar resistive switching features with the resistance ratio of high to low resistance states (HRS/LRS) more than 107. Detailed current–voltage I–V characteristic analysis suggests that the conduction mechanism in the low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in the high resistance state which results from the Schottky contacts between the metal electrodes and ZnO. The Ag/a-ZnO/Pt devices also show excellent retention performance. These results suggest promising application potentials for Ag/a-ZnO/Pt RRAMs.

Graphical abstract: Amorphous ZnO based resistive random access memory

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/C5RA22728C
Article type
Paper
Submitted
29 Oct 2015
Accepted
25 Jan 2016
First published
27 Jan 2016

RSC Adv., 2016,6, 17867-17872

Author version available

Download author version (PDF)

Permissions

Request permissions

Amorphous ZnO based resistive random access memory

Y. Huang, Z. Shen, Y. Wu, X. Wang, S. Zhang, X. Shi and H. Zeng, RSC Adv., 2016, 6, 17867 DOI: 10.1039/C5RA22728C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements