* Corresponding authors

^a School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing 100083, China
E-mail: xiazg@ustb.edu.cn
Fax: +86-10-82377955
Tel: +86-10-82377955

^b Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

^c Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia

^d Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia

^e Laboratory of Crystal Physics, Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russia

^f Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Russia

^g Council of Scientific and Industrial Research – National Physical Laboratory Dr K S Krishnan Marg, New Delhi 110012, India

^h Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India

ⁱ New Technologies – Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic

^j Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis, Malaysia