Issue 79, 2014
From the journal:

RSC Advances

Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

Haiyan Wang,a   Shizhong Zhou,a   Zhiting Lin,a   Tian Qiao,a   Liyi Zhong,a   Kaicheng Wang,a   Xiaosong Hongb  and  Guoqiang Li*ac  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

b NVC Lighting Technology Corporation, Huizhou 516021, China

c Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
E-mail: msgli@scut.edu.cn

Abstract

This work has studied the influence of the generatrix's curvature of a dome-shaped patterned sapphire substrate (PSS) on the efficacy of GaN-based light emitting diodes (LEDs). The generatrix's central angle is carefully optimized by optical simulation. It is revealed that the dome-shaped PSS with a generatrix central angle of 10° is optimal to improve the luminous efficacy of LED devices. Subsequent crystal growth and characterization of LED wafers grown on dome-shaped PSSs with different generatrix central angles indicate that the central angle will not influence the as-grown LED wafers' crystalline quality, and the optimal central angle of 10° can enhance LED efficacy by about 19%.

Graphical abstract: Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

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Article information

DOI
https://doi.org/10.1039/C4RA04053H
Article type
Paper
Submitted
03 May 2014
Accepted
29 Aug 2014
First published
29 Aug 2014

RSC Adv., 2014,4, 41942-41946

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Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

H. Wang, S. Zhou, Z. Lin, T. Qiao, L. Zhong, K. Wang, X. Hong and G. Li, RSC Adv., 2014, 4, 41942 DOI: 10.1039/C4RA04053H

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