GaN grown with InGaN as a weakly bonded layer
Abstract
GaN thin films were grown with InGaN as an interlayer. The GaN films show different stress states with and without an InGaN interlayer. The influence of the In composition in InGaN on the properties of the high temperature (HT) GaN overlayer was discussed and potential stress-free points were extrapolated. The effect of H2 on the growth of HT GaN was found to be that it assisted the decomposition of InGaN. A nearly stress free GaN single-crystalline film with mirror-like morphology and single polarity was obtained by inserting an appropriate InGaN interlayer and the growth mechanism of GaN, with a regular network as the template, was discussed. Our research on the controllable growth of high-quality GaN thin film is very important for GaN-based optoelectronic and electronic devices.
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