A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

Huajing Fang; Qiang Li; Wenhui He; Jing Li; Qingtang Xue; Chao Xu; Lijing Zhang; Tianling Ren; Guifang Dong; H. L. W. Chan; Jiyan Dai; Qingfeng Yan

doi:10.1039/C5NR05098G

A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory†

Huajing Fang,^a Qiang Li,^a Wenhui He,^a Jing Li,^a Qingtang Xue,^b Chao Xu,^a Lijing Zhang,^a Tianling Ren,^b Guifang Dong,^a H. L. W. Chan,^c Jiyan Dai*^c and Qingfeng Yan*^a

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* Corresponding authors

^a Department of Chemistry, Tsinghua University, Beijing, China
E-mail: yanqf@mail.tsinghua.edu.cn

^b Institute of Microelectronics, Tsinghua University, Beijing 100084, China

^c Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
E-mail: jiyan.dai@polyu.edu.hk

Abstract

We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 10³. More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

Nanoscale

A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory†

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A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

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