Photoluminescence and lasing characteristics of single nonpolar GaN microwires

S. S. Yan; A. Q. Chen; Y. Y. Wu; H. Zhu; X. H. Wang; C. C. Ling; S. C. Su

doi:10.1039/C7RA01921A

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

S. S. Yan,^a A. Q. Chen,^b Y. Y. Wu,^c H. Zhu,^c X. H. Wang,^d C. C. Ling^b and S. C. Su

*^ab

Author affiliations

* Corresponding authors

^a Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
E-mail: shichensu@scnu.edu.cn

^b Department of Physics, The University of Hong Kong, Hong Kong, China

^c State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China

^d Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Abstract

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst. The temperature-dependent photoluminescence (PL) properties of a single GaN MW were discussed comprehensively. Below the temperature of 90 K, the neutral donor-bound exciton (D⁰X) line dominates in the spectrum, while the free–exciton transition dominates at temperatures above 90 K. The optical properties of GaN MWs exhibit a multiple-mode-stimulated-amplified emission with a peak around 375 nm and a corresponding lasing threshold of about 120 kW cm⁻². In addition, the lasing characteristics of GaN MWs were explored by the finite-difference time-domain (FDTD) method.

Article information

https://doi.org/10.1039/C7RA01921A

Article type

Paper

Submitted

15 Feb 2017

Accepted

04 Apr 2017

First published

18 Apr 2017

This article is Open Access

Download Citation

RSC Adv., 2017,7, 21541-21546

Permissions

Request permissions

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

S. S. Yan, A. Q. Chen, Y. Y. Wu, H. Zhu, X. H. Wang, C. C. Ling and S. C. Su, RSC Adv., 2017, 7, 21541 DOI: 10.1039/C7RA01921A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

RSC Advances

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

Abstract

Article information

Download Citation

Permissions

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

Social activity

Search articles by author

Spotlight

Advertisements