The presence of a large bandgap means that a single layer of molybdenum disulphide can be used to make field-effect transistors with high on/off ratios and reasonably high mobilities.
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Schwierz, F. Flat transistors get off the ground. Nature Nanotech 6, 135–136 (2011). https://doi.org/10.1038/nnano.2011.26
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DOI: https://doi.org/10.1038/nnano.2011.26
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