Abstract
Fano resonances with a characteristic asymmetric line shape can be observed in light scattering, transmission and reflection spectra of resonant optical systems1. They result from interference between direct and indirect, resonance-assisted pathways. In the nanophotonics field, Fano effects have been observed in a wide variety of systems, including metallic nanoparticle assemblies2, metamaterials2,3 and photonic crystals4,5. Their unique properties find extensive use in applications, including optical filtering, polarization selectors, sensing, lasers, modulators and nonlinear optics6,7,8,9,10,11. We report on the observation of a Fano resonance in a single semiconductor nanostructure, opening up opportunities for their use in active photonic devices. We also show that Fano-resonant semiconductor nanostructures afford the intriguing opportunity to simultaneously measure the far-field scattering response and the near-field energy storage by extracting photogenerated charge. Together they can provide a complete experimental characterization of this type of resonance.
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Acknowledgements
We acknowledge financial support from the Global Climate and Energy Project at Stanford University and the Department of Energy Grant No. DE-FG07ER46426
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P.F., Z.Y., S.F. and M.L.B. conceived the ideas for this paper. P.F. and Z.Y. designed, fabricated and simulated the device structures. P.F. wrote the initial draft of the manuscript. S.F. and M.L.B. supervised the project.
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Fan, P., Yu, Z., Fan, S. et al. Optical Fano resonance of an individual semiconductor nanostructure. Nature Mater 13, 471–475 (2014). https://doi.org/10.1038/nmat3927
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DOI: https://doi.org/10.1038/nmat3927
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