Abstract
PULSE-HEIGHT spectra from lithium-drifted p–i–n junctions in silicon, irradiated by γ-rays, have been published1. The photopeaks in these spectra are from about 1/20 to about 1/100 the height of the Compton distribution, rendering useful γ-ray spectroscopy difficult. The photoelectric cross-section varies as Z5, where Z is the atomic number of the absorbing element, the Compton cross-section varying as Z. Thus a high atomic number-absorbing medium will produce more useful γ-ray spectra.
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References
Bailey, N. A., Grainger, J., and Mayer, J. W., Rev. Sci. Instrum., 32, 865 (1961).
Pell, E. M., J. App. Phys., 31, 291 (1960).
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FRECK, D., WAKEFIELD, J. Gamma-Ray Spectrum obtained with a Lithium-drifted p–i–n Junction in Germanium. Nature 193, 669 (1962). https://doi.org/10.1038/193669a0
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DOI: https://doi.org/10.1038/193669a0
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