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Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass

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Abstract

We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available.

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Authors and Affiliations

  1. Dipartimento di Fisica, CNR and INFM, Piazza Torricelli 2, 56126, Pisa, Italia

    G. Carelli, N. Ioli, A. Messina, A. Moretti, S. Schepis & F. Strumia

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  1. G. Carelli
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  2. N. Ioli
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  3. A. Messina
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  4. A. Moretti
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  5. S. Schepis
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  6. F. Strumia
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Carelli, G., Ioli, N., Messina, A. et al. Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass. International Journal of Infrared and Millimeter Waves 19, 1191–1199 (1998). https://doi.org/10.1023/A:1022620709303

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  • DOI: https://doi.org/10.1023/A:1022620709303

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