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Study by Rutherford Backscattering Spectroscopy of the Heterostructure of Lead Titanate Thin Films

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Abstract

A depth profile analysis of modified lead titanate thin films was performed by means of Rutherford Backscattering Spectroscopy (RBS). These films were deposited from sol-gel synthesized solutions onto platinized silicon substrates and crystallized by thermal treatments at temperatures of about 650°C. The chemistry of the solution and the thermal treatment for crystallization affect the heterostructure of the resulting films. Losses of lead and formation of substrate-film interfaces are produced during the crystallization of the films. These film characteristics determine their ferroelectric response.

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Authors and Affiliations

  1. Inst. Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049, Madrid, Spain

    M.J. Martín, M.L. Calzada & J. Mendiola

  2. Departámento de Física, Inst. Tecnológico e Nuclear, Estrada Nacional no. 10, 2685, Sacavém, Portugal

    M.F. Da Silva

  3. Centro de Física da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699, Lisboa, Portugal

    J.C. Soares

Authors
  1. M.J. Martín
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  2. M.L. Calzada
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  3. J. Mendiola
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  4. M.F. Da Silva
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  5. J.C. Soares
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Martín, M., Calzada, M., Mendiola, J. et al. Study by Rutherford Backscattering Spectroscopy of the Heterostructure of Lead Titanate Thin Films. Journal of Sol-Gel Science and Technology 13, 843–847 (1998). https://doi.org/10.1023/A:1008650602148

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  • DOI: https://doi.org/10.1023/A:1008650602148

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