Skip to main content
Log in

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

The hafnium and silicon precursors, Hf(NMe2)4 and ButMe2SiOH, have been investigated for the MOCVD of high-κ hafnium silicate, (HfO2)1–x –(SiO2) x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO2. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. P. A. Packan, Science 285 (1999) 2079.

    Google Scholar 

  2. G. D. Wilk, R. M. Wallace and J. M. Anthony, J. Appl. Phys. 89 (2001) 5243.

    Google Scholar 

  3. T. M. Klein, D. Niu, W. S. Epling, W. Li, D. M. Maher, C. C. Hobbs, R. I. Hedge, I. J. R. Baumvol and G. N. Parsons, Appl. Phys. Lett. 75 (1999) 4001.

    Google Scholar 

  4. P. K. Roy and I. C. Kizilyalli, ibid. 72 (1998) 2835.

    Google Scholar 

  5. S. A. Campbell, D. C. Gilmer, X. Wang, M. T. Hsich, H. S. Kim, W. L. Gladfelter and J. H. Yan, IEEE Trans. Elec. Devices 44 (1997) 104.

    Google Scholar 

  6. M. Copel, M. A. Gribelyuk and E. Gusev, Appl. Phys. Lett. 76 (2000) 436.

    Google Scholar 

  7. B. H. Lee, L. Kang, R. Nieh, W.-J. Qi and J. C. Lee, ibid. 76 (2000) 1926.

    Google Scholar 

  8. B. C. Hendrix, A. S. Borovik, C. Xu, J. F. Roeder, T. H. Baum, M. J. Bevan, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu and L. Colombo, ibid. 80 (2002) 2362.

    Google Scholar 

  9. R. G. Gordon, J. Becker, D. Hausmann and S. Suh, Chem. Mater. 13 (2001) 2463.

    Google Scholar 

  10. J. L. Roberts, P. A. Marshall, A. C. Jones, P. R. Chalker, J. F. Bickley, P. A. Williams, S. Taylor, L. M. Smith, G. W. Critchlow, M. Schumacher and J. Lindner, J. Mater. Chem. 14 (2004) 391.

    Google Scholar 

  11. P. Bailey, T. C. Q. Noakes and D. P. Woodruff, Sur. Sci. 426 (1999) 358.

    Google Scholar 

  12. E. P. Gusev, H. C. Lu, T. Gustafsson and E. Garfunkel, Phys. Rev. B 52 (1995) 1759.

    Google Scholar 

  13. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallacea, M. R. Visokay, M. Douglas and L. Colombo, Appl. Phys. Lett. 79 (2001) 4192.

    Google Scholar 

  14. J. Morais, L. Miotti, G. V. Soares, S. R. Teixeira, R. Pezzi, K. P. Bastos, I. J. R. Baumvola, A. L. P. Rotondaro, J. J. Chambers, M. R. Visokay and L. Colombo, ibid. 81 (2002) 2995.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Chalker, P.R., Marshall, P.A., Potter, R.J. et al. Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. Journal of Materials Science: Materials in Electronics 15, 711–714 (2004). https://doi.org/10.1023/B:JMSE.0000043417.59029.d6

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:JMSE.0000043417.59029.d6

Keywords

Navigation