Abstract
We demonstrate the ultrafast modulation of interband (IB)-resonant light (1.0–1.1 μm) by near-infrared intersubband (ISB)-resonant light (1.55–1.9 μm) in n-doped InGaAs/AlAsSb multiple quantum wells (QWs) using non-degenerate pump–probe spectroscopy. A modulation with an absorption recovery time of 1.0–2.0 ps has been observed in a planer-type modulation device due to ultrafast ISB relaxation of the carriers. The IB carrier relaxation process in the absence of an ISB-resonant light has also been investigated by time-resolved photoluminescence (PL) measurement. The modulation speed is determined by the inter- and intra-subband relaxation of the carriers in the conduction subband. The modulation speed at 1.1 μm due to an ISB-resonant pump light at 1.95 μm has been observed to be 1.4 ps at excitation energy of 500 fJ/μm2.
Similar content being viewed by others
References
Akiyama, T., A. Neogi, H. Yoshida and O. Wada. Electron. Lett. 36 362, 1999.
Asano, T., S. Noda, T. Abe and A. Sasaki. Jpn. J. Appl. Phys. 35 1285, 1996.
Asano, T., S. Noda and A. Sasaki. Jpn. J. Appl. Phys. 37 2510, 1998.
Bastard, G. Wave Mechanics Applied to Semiconductor Heterostructures, Editions de Physique, Halstred Press, Paris, 1988.
Cebulla, U., G. Bacher, A. Forcel, G. Mayer and W.T. Tsang. Phys. Rev. 39 6257, 1989.
Faist, J., F. Capasso, C. Gamachl, D.L. Sivco, C. Sirtori, A.L. Hutchinson and A.Y. Cho. Science 264 553, 1994.
Gmachl, C., H.M. Ng and A.Y. Cho. Appl. Phys. Lett. 77 334, 2000; Iizuka, N., N. Suzuki, O. Wada, T. Asano and S. Noda. Appl. Phys. Lett. 77 648, 2000.
Gupta, S., P.K. Bhattacharya, J. Pamulapati and G. Mourou. J. Appl. Phys. 69 3219, 1991.
Levine, B.F. J. Appl. Phys. 74 R1, 1993.
Lugand, C., T. Benyattou, G. Guillot, T. Venet, M. Gendry, G. Hollinger and B. Sermage. Appl. Phys. Lett. 70 3257, 1997.
Mozume, T., N. Georgiev, H. Yoshida, A. Neogi and T. Nishimura. J. Vac. Sci. and Tech. 18 1586, 2000.
Mozume, T. and N. Georgiev. Appl. Phys. Lett. 75 2371, 1999; J. Appl. Phys. 89 1064, 2001.
Neogi, A., H. Yoshida, T. Mozume, N. Georgiev, T. Akiyama and O. Wada. Physica E 7 183, 2000; Nakata, Y., Y. Sugiyama, T. Inata, O. Ueda, S. Sasa, S. Muto and T. Fuji. Mater. Res. Soc. Symp. Proc. 198 289, 1990.
Neogi, A., O. Wada, Y. Takahashi and H. Kawaguchi. Opt. Lett. 23 1212, 1998.
Neogi, A., H. Yoshida, T. Mozume and O. Wada. J. Appl. Phys. 85 3352, 1999.
Szmulowicz, F., M.O. Manesreh, C.E. Statz and T. Vaughan. Phys. Rev. B 50 11618, 1994.
Yoshida, H., T. Mozume, A. Neogi and O. Wada. Electron. Lett. 35 1103, 1999.
Yoshida, H., T. Mozume, A. Neogi, T. Akiyama, N. Georgiev and O. Wada. Tech. Digest Conf. on Lasers and Electro-Optics, May, 2000, San Francisco, p. 357.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Neogi, A., Yoshida, H., Mozume, T. et al. Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells. Optical and Quantum Electronics 33, 975–983 (2001). https://doi.org/10.1023/A:1017551212236
Issue Date:
DOI: https://doi.org/10.1023/A:1017551212236