Electron–muon dynamics in n‐type silicon

Abstract

We report RF‐μSR results in lightly n‐doped Si samples. Measurement of the diamagnetic amplitude in both the \langle 100\rangle and \langle 111\rangle directions for a sample with N_D\leq5\times 10¹²\ cm^-3 clarifies the charge/spin electron‐exchange dynamics for bond‐centered muonium and yields a 3300 Å ² electron‐capture cross section at Mu⁺ _BC. An increase in the Mu⁰ _BC RF amplitude observed at 30K in a sample of N_D\simeq 2\times 10¹³\ cm^-3 provides direct evidence for enhanced low‐temperature creation of Mu_BC ⁰ at the expense of Mu_T ⁰0 with increased electron concentration.