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Mixed phase F-doped SnO2 film and related properties deposited by ultrasonic spraying

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Abstract

Fluorine-doped tin oxide thin films with amorphous/crystal mixed phases were deposited on silicon and quartz sheets by an ultrasonic spraying method and investigated with XPS, XRD, AFM and TEM techniques. The XRD spectra and the results of TEM analysis show that nanoscale amorphous clusters were formed within the grain boundary region. At room temperature, electron transportation is predominantly limited by amorphous defect scattering of the crystal grain boundary region. The minimum electrical resistivity 4.0×104Ωcm was obtained through decreasing the amorphous phase fraction and the preferred orientation arrangement of the crystal grains. A 0.8-eV shift exists between the tin 3d binding energy in thin films having the preferred crystallite orientation with (1 1 0) plane parallel to the substrate and that with the (2 0 0) plane parallel to the substrate.

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Authors and Affiliations

  1. Solar Energy Institute, Department of Physics, Shanghai Jiaotong University, Shanghai, 200030, People's Republic of China

    Z. B. Zhou, R. Q. Cui & G. M. Hadi

  2. Department of Material Science and Engineering, Shanghai Jiaotong University, Shanghai, 200030, People's Republic of China

    W. Y. Li

  3. Center of Physical and Chemical Analysis, Shanghai Jiaotong University, Shanghai, 200030, People's Republic of China

    Z. M. Ding

Authors
  1. Z. B. Zhou
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  2. R. Q. Cui
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  3. G. M. Hadi
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  4. W. Y. Li
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  5. Z. M. Ding
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Zhou, Z.B., Cui, R.Q., Hadi, G.M. et al. Mixed phase F-doped SnO2 film and related properties deposited by ultrasonic spraying. Journal of Materials Science: Materials in Electronics 12, 417–421 (2001). https://doi.org/10.1023/A:1011247017682

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