Abstract
Structure, phase composition and electrical conductivity of thin yttria-stabilized zirconia (YSZ) films deposited by electron beam evaporation on a silicon (1 0 0) substrate at different temperatures i.e. room temperature (r.t.), 700 and 830°C, as well as the quality of the YSZ–Si interface have been investigated. The phase composition was verified by Raman spectroscopy and by infrared (i.r.) transmission measurements. The structure of films changed in agreement with their electrical conductivity depending on the deposition temperature. Both structure and thereby electrical conductivity were influenced by the high concentration of Y2O3 stabilizer used and by the post-deposition thermal treatment of films. The deposition temperature was also important in determining the quality of the YSZ–Si interface and hence the accessible sweep of the surface potential. The capacitance–voltage characteristics of the metal–insulator–semiconductor (MIS) structures incorporating YSZ films measured at r.t. showed hysteresis and positive shifts of the flat-band voltages. © 1998 Chapman & Hall
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. S. Isaacs, Adv. Ceram. 3 (1981) 406 and references therein.
G. Velasco, Solid State Ionics 9/10 (1983) 783.
S. Chandra, in “Superionic Solids” (North Holland, Amsterdam, 1981) Ch. 6 and references therein.
J. A. Kilner and B. C. H. Steele, in “Non-stoichiometric oxides”, edited by O. T. Sorensen (Academic, London, 1981) p. 233.
M. J. Verkerk, A. J. A. Winnubst and A. J. Burggraaf, J. Mater. Sci. 17 (1982) 3113.
S. Badwal, ibid. 19 (1984) 1767.
S. Chromik, B. Wuyts, I. VÁvra, A. RosovÁ, F. Hanic, S. BeŇaČka and Y. Bruynseraede, Physica C 226 (1994) 153.
T. Matthee, J. Wecker, H. Behner and G. Friedel, J. Appl. Phys. Lett. 61 (1992) 1240.
I. Thurzo and K. GmucovÁ, Rev. Sci. Instrum. 65 (1994) 2244.
B. E. Warren, in “X-ray diffraction” (Addison-Wesley, Reading, MA, 1969).
D. W. Liu, C. H. Perry and R. P. Ingel, J. Appl. Phys. 64 (1988) 1413.
G. Chiodelli, A. Magistris, M. Scagliotti and F. Parmigiani, J. Mater. Sci. 23 (1988) 1159.
C. C. Chen, M. M. Nasrallah and H. U. Anderson, Solid State Ionics 70/71 (1994) 101.
B. A. Boukamp, “Equivalent circuit (EQUIVCRT. PAS) users manual” (University of Twente, Department of Chemical Technology, The Netherlands, 1989).
T. Norby and M. HartmanovÁ, Solid State Ionics 67 (1993) 57.
M. HartmanovÁ, I. TravĚnec, A. A. Urusovskaya, K. Putyera, D. Tunega and I. I. Korobkov, ibid. 76 (1995) 207.
J. W. Farmer, C. D. Lamp and J. M. Meese, J. Appl. Phys. Lett. 41 (1982) 1063.
T. J. Mego, Rev. Sci. Instrum. 57 (1986) 353.
P. E. Bagnoli, C. Ciofi, A. Diligenti, A. Innamorato and A. Nannini, Thin Solid Films 264 (1995) 109.
Y. Miyahara, J. Appl. Phys. 71 (1992) 2309.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hartmanova, M., Thurzo, I., Jergel, M. et al. Characterization of yttria-stabilized zirconia thin films deposited by electron beam evaporation on silicon substrates. Journal of Materials Science 33, 969–975 (1998). https://doi.org/10.1023/A:1004359727737
Issue Date:
DOI: https://doi.org/10.1023/A:1004359727737