Skip to main content
Log in

Effect of Oxygen Plasma on Growth, Structure and Ferroelectric Properties of SrBi2Ta2O9 Thin Films Formed by Pulsed Laser Ablation Technique

  • Published:
Journal of Electroceramics Aims and scope Submit manuscript

Abstract

Growth of SrBi2Ta2O9 (SBT) thin films has been carried out in the presence of O2-plasma created by applying a potential at an auxiliary ring electrode placed near the substrate. Effect of plasma excitation potential and polarity, especially negative polarity, on the formation of a proper SBT phase at 700°C and in modifying crystallite orientation and microstructure of SBT films over (1 1 1) oriented Pt film coated over TiO2/SiO2/Si(1 0 0) substrates has been demonstrated. Preferred c-axis orientation of SBT films changes to (a–b) orientation with decrease in plasma excitation potential from −700 to −350 V and eliminates secondary Bi2Pt phase formation even at 600°C Microstructural study show a 2-dimensional large flat c-oriented crystallites formed at −700 V change to small crystallites in conformity with the changed aspect ratio for crystallites in (a–b) plane parallel to film plane. Spectroscopic ellipsometric results are in agreement with the microstructural data. These affects are attributed to O2-ion bombardment during film growth which reduces nucleation barrier for growth of crystallites in (a–b) plane. O2-plasma sustains the cationic species formed by laser ablation, which along with O +2 ions, provide necessary activation energy and enhance the oxidation rates required for SBT phase formation even at 700°C. SBT films grown in O2-plasma show enhancement in remnant polarization value from 1.2 to 6.6 μC/cm2 and display ferroelectric properties superior to those formed without plasma. Further O2-plasma eliminates post deposition annealing step for observance of enhanced polarization values. This study shows O2-plasma excitation potential could be exploited as a new process parameter in laser ablation growth of ferroelectric oxide thin films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. C.A. Paz de Araujo, J.D. Cuchlaro, L.D. McMillan, M.C. Scott, and J.F. Scott, Nature, 347, 627 (1995).

    Google Scholar 

  2. R. Dat, J.K. Lee, O. Auciello, and A.I. Kingon, Appl. Phys. Lett., 67, 572 (1995).

    Google Scholar 

  3. K. Amanuma and T. Kunio, Integrated Ferroeletctics, 16, 175 (1997).

    Google Scholar 

  4. S.B. Desu and D.P. Vijay, Mater. Sci. Eng., B32, 75 (1995).

    Google Scholar 

  5. T. Mihara, H. Watanabe, and C.A. Paz de Araujo, Jpn. J. Appl. Phys., 33, 5281 (1994).

    Google Scholar 

  6. S.B. Desu, Phys. Stat. Sol. (a), 151, 467 (1995).

    Google Scholar 

  7. R. Ramesh, J. Lee, T. Sanda, V.G. Keramidas, and O. Auciello, Appl. Phys. Lett., 64, 2517 (1994).

    Google Scholar 

  8. H.D. Bhatt, S.B. Desu, D.P. Vijay, Y.S. Hwang, X. Zhang, M. Nagata, and A. Grill, Appl. Phys. Lett., 71, 719 (1997).

    Google Scholar 

  9. E.C. Subbarao, J. Phys. Chem. Solids, 23, 655 (1962).

    Google Scholar 

  10. I. Koiwa, Y. Okada, J. Mita, A. Hashimoto, and Y. Swada, Jpn. J. Appl. Phys., 36, 5904 (1997).

    Google Scholar 

  11. M. Nagata, D.P. Vijay, X. Zhang, and S.B. Desu, Phys. Stat. Sol. (A), 157, 75 (1996).

    Google Scholar 

  12. T. Hayashi, T. Hara, and H. Takahasi, Jpn. J. Appl. Phys., 36, 5900 (1997).

    Google Scholar 

  13. S.B. Desu, P.C. Joshi, X. Zhang, and S.O. Ryu, Appl. Phys. Lett., 71, 1041 (1997).

    Google Scholar 

  14. P.C. Joshi, S.O. Ryu, X. Zhang, and S.B. Desu, Appl. Phys. Lett., 70, 1080 (1997).

    Google Scholar 

  15. T. Noguchi, T. Hase, and Y. Miyaska, Jpn. J. Appl. Phys., 35, 4900 (1996).

    Google Scholar 

  16. S.-Y. Chen, X.-F. Du, and I.-W. Chen, Mat. Res. Soc. Symp. Proc., Vol. 361, 15 (1995).

    Google Scholar 

  17. Y. Ito, M. Ushikubo, S. Yohoyama, H. Matsunaga, T. Atsuki, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys., 35, 4925 (1996).

    Google Scholar 

  18. D.T. Thomas, N. Nujimura, S.K. Streiffer, O. Auciello, and A.J. Kingon, IEEE, 1, 495 (1996).

    Google Scholar 

  19. H.M. Yang, J.S. Luo, and W.T. Lin, J. Mater. Res., 12, 1145 (1997).

    Google Scholar 

  20. Y. Oishi, W. Wu, K. Fumoto, M. Okuyama, and Y. Hamakawa, Jpn. J. Appl. Phys., 35, 1242 (1996).

    Google Scholar 

  21. Y. Oishi, Y. Matsumuro, and M. Okuyama, Jpn. J. Appl. Phys., 36, 5896 (1997).

    Google Scholar 

  22. P. Chindandom and K. Vedam, Thin Sol. Films, 243, 439 (1993).

    Google Scholar 

  23. J.A. Woollam Co., Inc. USA, WASE 32 Software.

  24. J. Robertson, C.W. Chen, W.L. Warwn, and C.P. Gutleben, Appl. Phys. Lett., 69, 1704 (1996).

    Google Scholar 

  25. S. Bustamente, M. Okumura, D. Gehrrlich, L.R. Carlson, H.S. Kwok, and Y.T. Lee, J. Chem. Phys., 86, 508 (1987).

    Google Scholar 

  26. F.J. Kampas, in Semiconductors and Semimetals J.I. Pankov ed., Vol 21, Part A (Academic Press, NY, 1984), p. 159.

    Google Scholar 

  27. J.A. Thornton, Thin Sol. Films, 107, 3 (1983).

    Google Scholar 

  28. E. Kay and S.M. Rossnagel, (1989). In Handbook of Ion Beam Process Techniques, J.J. Cuomo, S.M. Rossnagel, H.F. Kaufman, eds. (Noyes Publications, Park Ridge, New Jersey), pp. 170–193.

    Google Scholar 

  29. S.V. Gapanov, B.M. Luskin, B.A. Nesterov, and N.N. Salashchenko, Sov. Tech. Phys. Lett., 3, 234 (1977).

    Google Scholar 

  30. X.-Du and I.-Wein Chen, Mat. Res. Soc. Symp. Proc., Vol 493, 1998, MRS, p. 261.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tirumala, S., Rastogi, A. & Desu, S. Effect of Oxygen Plasma on Growth, Structure and Ferroelectric Properties of SrBi2Ta2O9 Thin Films Formed by Pulsed Laser Ablation Technique. Journal of Electroceramics 5, 7–20 (2000). https://doi.org/10.1023/A:1009929109536

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1009929109536

Navigation