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The Effects of the Self-Consistent Field of Electrons and Γ–X-Intervalley Scattering on Resonant Tunneling in Double-Barrier Structures

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Abstract

The self-consistent electron field approximation is used to calculate the current-voltage characteristics and electron-transmission and tunneling-time spectra in GaAs/AlAs (001) semiconductor heterostructures within the three-valley effective-mass model and to study the effect of the composite band spectrum of GaAs and AlAs materials.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Russia

    G. F. Karavaev & A. A. Voronkov

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  1. G. F. Karavaev
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  2. A. A. Voronkov
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Karavaev, G.F., Voronkov, A.A. The Effects of the Self-Consistent Field of Electrons and Γ–X-Intervalley Scattering on Resonant Tunneling in Double-Barrier Structures. Russian Physics Journal 46, 81–90 (2003). https://doi.org/10.1023/A:1024060905260

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