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New extraction method of an equivalent circuit for an inductor in BiCMOS technology including lossy effects

Published online by Cambridge University Press:  07 January 2011

Linh Nguyen Tran
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Emmanuelle Bourdel
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Sebastien Quintanel
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Daniel Pasquet*
Affiliation:
LaMIPS, 2 rue de la Girafe, 14079 Caen, France. Phone: +33 6 33 73 64 99
*
Corresponding author: D. Pasquet Email: d.pasquet@ieee.org

Abstract

In order to perform an accurate design, in particular in non-linear circuit, the equivalent circuit of inductors must be precisely described in a wide frequency band. Many models have been proposed to describe the behavior of inductors on lossy substrate. They consist of a great number of elements, often suggested by physical phenomena. Most of them cannot be extracted from measurements. In this paper, we propose a model composed only of elements that can be analytically extracted from measurement results.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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