Elsevier

Physics Letters A

Volume 239, Issues 4–5, 9 March 1998, Pages 277-284
Physics Letters A

Measurement of the deformation potentials for GaAs using polarized photoluminescence

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Abstract

The deformation potentials a, b and d for GaAs have been determined from polarized photoluminescence measurements upon a set of epitaxially grown strained GaAs structures possessing varying levels of compressive biaxial lattice strain. X-ray diffraction measurements yield values for the degree of lattice strain while the polarized photoluminescence measurements permit a separate determination to be made of the heavy hole and light hole band energies. Correlation of these data allows for the determination of the deformation potentials within the context of the orbital-strain Hamiltonian.

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This work was supported in part by the U.S. Department of Energy, under Contract Nos. DE-AC03-76SF00515 (SLAC), and DE-AC02-76ER00881 (UW).

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