Correction of dopant concentration fluctuation effects in silicon drift detectors

doi:10.1016/S0168-9002(00)01214-6

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 461, Issues 1–3, 1 April 2001, Pages 222-225

https://doi.org/10.1016/S0168-9002(00)01214-6 Get rights and content

Abstract

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.

References (9)

A. Vacchi
Nucl. Instr. and Meth. A
(1991)
W. Dabrowski
Nucl. Phys. B
(1995)
W. von Ammon et al.
Nucl. Instr. and Meth.
(1984)
S. Beolè
Nucl. Instr. and Meth. A
(1995)

There are more references available in the full text version of this article.

Cited by (11)

Results from beam tests of large area silicon drift detectors
2005, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Silicon drift detectors with an active area of $7.0 \times 7.5 {cm}^{2}$ will equip the two middle layers of the Inner Tracking System of the ALICE experiment. The performance of several prototypes was studied during beam tests carried out at the CERN SPS facility. In this paper, the results obtained from the data taken during August 2000 will be presented. The spatial resolution was studied in the case of tracks perpendicular to the detector and in the case of inclined tracks. Results on the signal analysis and of the double-track resolution are also shown.
Development of segmented semiconductor arrays for quantum imaging
2003, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The field of pixel detectors has grown strongly in recent years through progress in CMOS technology, which permits many hundreds of transistors to be implemented in an area of 50–200 μm². Pulse processing electronics with noise of the order of 100 e⁻ RMS permits to distinguish photons of a few kilo-electron-Volts from background noise. Techniques are under development, which should allow single chip systems (area ∼1 cm²) to be extended to larger areas. This paper gives an introduction into the concept of quantum imaging using direct conversion in segmented semiconductor arrays. An overview of projects from this domain using strip, pad and in particular hybrid pixel detectors will be presented. One of these projects, the Medipix project, is described in more detail. The effect of different correction methods like threshold adjustment and flat field correction is illustrated and new measurement results and images are presented.
Fixed pattern deviations in Si pixel detectors measured using the Medipix 1 readout chip
2003, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Citation Excerpt :
It suggests that variations in pixel geometry introduce deviations in the charge collection. Together with the effects of a parasitic field caused by bulk doping inhomogeneities which give raise to field components perpendicular to the charge collection direction [9,10], this can lead to a variation of pixel response with the photon energy and as a further result to a dependency of the flatfield correction on the spectral content of the incident beam. The redistribution of generated charge in the disconnected pixel to the adjacent pixels does not exceed 40% even in strong over depletion.
Dopant fluctuations and other defects in silicon wafers can lead to systematic errors in several parameters in particle or single-photon detection. In imaging applications non-uniformities in sensors or readout give rise to fixed pattern image noise and degradation of achievable spatial resolution for a given flux. High granularity pixel detectors offer the possibility to investigate local properties of the detector material on a microscopic scale. In this paper, we study fixed pattern detection fluctuations and detector inhomogeneities using the Medipix1 readout chip. Low-frequency fixed pattern signal deviations due to dopant inhomogeneities can be separated from high-frequency deviations.
The ALICE Silicon Drift Detector system
2003, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Large area silicon drift detector for the ALICE experiment
2002, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Two hundred and sixty Silicon Drift Detectors (SDDs), each with an active area of $7.0×7.5 cm^{2}$ , will equip two of the six cylindrical layers of high precision position sensitive detectors that constitute the Inner Tracking System (ITS) of the ALICE experiment at LHC. In developing the ALICE SDD, one of the objectives was to work out a robust and redundant design. Unlike the case of silicon microstrip or pixel detectors, a single defect in a SDD may be propagated throughout the whole detector. One of the features of the detector is the original design of the integrated voltage divider that allows to attenuate effectively such a propagation in the most practical cases. Device simulations and laboratory measurements are presented.
Recent results from beam tests of large area silicon drift detectors
2002, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

View all citing articles on Scopus

¹: CINVESTAV Mexico City, Mexico.

²: St. Petersburg University, St. Petersburg, Russia.

View full text

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Correction of dopant concentration fluctuation effects in silicon drift detectors

Abstract

Nucl. Instr. and Meth. A

Nucl. Phys. B

Nucl. Instr. and Meth.

Nucl. Instr. and Meth. A

Results from beam tests of large area silicon drift detectors

Development of segmented semiconductor arrays for quantum imaging

Fixed pattern deviations in Si pixel detectors measured using the Medipix 1 readout chip

The ALICE Silicon Drift Detector system

Large area silicon drift detector for the ALICE experiment

Recent results from beam tests of large area silicon drift detectors