Elsevier

Thin Solid Films

Volume 633, 1 July 2017, Pages 76-80
Thin Solid Films

Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors

https://doi.org/10.1016/j.tsf.2016.10.011Get rights and content
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Highlights

  • Pure solution-based deposition approach for CIGS thin film solar cells.

  • Dissolution of metal chalcogenide precursors in hydrazine-free solvents.

  • Straightforward absorber compositional control, by varying the precursor solution.

  • Tuning of material and solar cell properties with Ga content.

Abstract

In order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology.

Keywords

Chalcopyrite
CIGS
Gallium content
Thin-film solar cells
Spray-coating
Solution processing

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