Abstract
Purchase PDF (122 K)
E-mail Article
Add to my Quick Links
Cited By in Scopus (6)
Purchase PDF (559 K)
20 mJ/cm2. Higher laser fluences deplete some weakly bound atoms in the thin film, such as nitrogen in CuPc. Semiconductor characteristics of CuPc thin film were examined in a Schottky diode. DANS-doped amorphous fluoropolymer was also fabricated by combining two ablation deposition processes. A crystalline feature of DANS disappears at low DANS concentrations in a fluoropolymer matrix.
doi:10.1016/j.ssc.2004.10.035 
Copyright © 2005 Elsevier Ltd All rights reserved.
Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique
Received 29 September 2004;
References and further reading may be available for this article. To view references and further reading you must purchase this article.
Abstract
Bi3.99Ti2.97V0.03O12 (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (Pr) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2Pr of 42 μC cm−2, which is the largest for BTV thin films among the values reported so far.
Keywords: A. BTV thin films; B. Laser ablation; D. Remnant polarization; D. Electrical properties
PACS: 77.80.−e
