Elsevier

Scripta Materialia

Volume 115, 1 April 2016, Pages 62-65
Scripta Materialia

Regular Article
Charge transport behaviors in epitaxial BiFeO3 thick films sputtered with different Ar/O2 flow ratios

https://doi.org/10.1016/j.scriptamat.2015.12.029Get rights and content

Abstract

Heteroepitaxial BiFeO3 thick films were prepared on (100) LaAlO3 substrates using magnetron sputtering. The sputtering atmosphere, i.e. Ar/O2 flow ratio, showed significant influence on the charge transport behaviors of BiFeO3 films. The distinct current density–electric field (J–E) characteristics of films were fitted to three charge transport models: ionic conduction, Schottky emission, and space-charge-limited-current (SCLC). These models were verified by an Auger depth profiling study, which revealed the chemical compositions of the films across their thicknesses. The apparent flow ratio dependence of charge transport in these films is well explained by the models with the supporting Auger data.

References (29)

  • W. Zhang et al.

    Acta Mater.

    (2015)
  • Z.H. Chen et al.

    Adv. Funct. Mater.

    (2011)
  • J. Wang et al.

    Science

    (2003)
  • H.W. Jang et al.

    Adv. Mater.

    (2009)
  • B. Jiang et al.

    Appl. Phys. Lett.

    (2012)
  • K.Y. Yun et al.

    J. Appl. Phys.

    (2004)
  • R.J. Zeches et al.

    Science

    (2009)
  • J.X. Zhang et al.

    Nat. Nanotechnol.

    (2011)
  • S.R. Basu et al.

    Appl. Phys. Lett.

    (2008)
  • Y.W. Li et al.

    J. Phys. D. Appl. Phys.

    (2008)
  • V.R. Palkar et al.

    Appl. Phys. Lett.

    (2002)
  • C.M. Raghavan et al.

    J. Am. Ceram. Soc.

    (2014)
  • F. Yan et al.

    J. Phys. Chem. C

    (2010)
  • T. Kawae et al.

    Appl. Phys. Lett.

    (2009)
  • Cited by (0)

    1

    These two authors contributed equally to this work.

    View full text