Physica E: Low-dimensional Systems and Nanostructures
Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
Introduction
There are only a few studies of the interband transitions of (Ga,In)(N,As)/GaAs quantum wells (QWs) [1], [2], [3], [4], [5], [6]. Information about the valence band offset might be obtained from analysing the type I to type II transition occurring in (Ga,In)(N,As)/GaNxAs1−x QWs when x is increased or an external electric field is applied.
Section snippets
Experimental details
A series of Ga0.77In0.23As/GaNxAs1−x QWs with x of 0–2.2% and a series of edge emitting laser structures with three Ga0.7In0.3N0.005As0.995 QWs with GaNxAs1−x barriers in the active region and the corresponding reference QWs with x of 0–3% were grown on GaAs by metal-organic vapour-phase epitaxy. The interband transitions of the QW structures and the laser structures were studied by photomodulated reflectance (PR) and electromodulated absorption (EA), respectively [7], [8].
Results and discussion
PR spectra of four Ga0.77In0.23As/GaNxAs1−x QWs with x ranging from 0.48% to 2.2% are shown in Fig. 1(a). The large N-induced red shift of the Ga(N,As) barrier with increasing x can be seen clearly. Arrows indicate the energetic position of the Ga(N,As) band gap. The solid line represents the band gap of Ga0.77In0.23As pseudomorphically grown on GaAs. The dashed line indicates the position of the lowest transition in the spectrum of the sample with x=0.48%. The PR spectrum of this
Summary and conclusions
Ga0.77In0.23As/GaNxAs1−x and Ga0.7In0.3N0.005As0.995/GaNxAs1−x QWs show a type I to type II transition of the band alignment with increasing x at about 1% and 3%, respectively.
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