Elsevier

Physica B: Condensed Matter

Volume 405, Issue 3, 1 February 2010, Pages 996-998
Physica B: Condensed Matter

High performance Schottky UV photodetectors based on epitaxial AlGaN thin film

https://doi.org/10.1016/j.physb.2009.10.040Get rights and content

Abstract

Al0.25Ga0.75N ultraviolet (UV) photodetector was fabricated on Al2O3 by metal organic chemical vapor deposition (MOCVD). Based on the Al0.25Ga0.75N epitaxial layer, planar geometry Schottky type metal–emiconductor–metal (MSM) photodetector was fabricated. The device shown very low dark current about 20 pA at 1 V bias, and the photocurrent/dark current rejection is more than five orders of magnitude. At 1 V bias, the peak responsivity of 0.07 A/W was achieved at 308 nm, corresponding to the detectivity about 4.43×1011 cm Hz1/2/W.

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