Oxide muonics: A new compendium
Introduction
Since the earliest spectroscopic studies of muonium in quartz, and in a relatively small number of other wide-gap non-magnetic oxides, the use of muonium as a model for hydrogen has taken on a new importance. This follows confirmation that hydrogen forms a shallow-donor state in ZnO; that is, its electron wave function does not retain atomic character but delocalizes into conduction-band states. The question arises as to whether hydrogen can similarly act as an n-type dopant and induce electronic conductivity in other oxides. A particular concern is that it might do so in those high-permittivity materials such as and that are destined to replace as nano-scale gate dielectrics. We have therefore undertaken a new survey of muonium states in a wide selection of oxides, both semiconducting and dielectric. We use the term muonics to describe the use of muonium data as a model for the electronic structure and electrical activity of hydrogen in the dilute monatomic limit. Comparable ESR data for H in oxides is sparse, but fortunately include the trapped atoms in and , as well as the donor in ZnO, thereby validating the muonics principle both for deep and shallow states.
Section snippets
Normal muonium
Much studied in quartz and ice, the interstitially trapped atom known as normal muonium was also known to early studies in , BeO, CaO and MgO [1], [2], [3], [4], [5], [6]. Using the longitudinal-field method of hyperfine decoupling or repolarization (as in the first studies of [1]), we have also detected normal muonium in polycrystalline samples of , , , , , , SrO, , and YSZ.1
Shallow-donor muonium
In the early studies, it was puzzling why muonium did not seem to be formed in all other wide-gap oxides. It may be that shallow-donor states of the type now known in ZnO [11], [12] were overlooked: the weak binding energy and very low hyperfine constants require a careful search for broadening or splitting of the Larmor precession spectrum at cryogenic temperatures. Thus was originally thought to show only a diamagnetic muon state [4] and the significance of a low-T broadening of its
Anomalous muonium
The oxides also show several examples of highly anisotropic muonium states with hyperfine parameters reminiscent of anomalous muonium in tetrahedral semiconductors. Muonium in HgO shows a contact term of 15 MHz and a dipolar term of 5 MHz, giving rise to a striking level-crossing resonance at 55 mT [18]; motional effects described in an accompanying paper suggest a muon site not at the bond-centre but antibonding to oxygen [19]. The parameters imply a reasonably compact electronic orbital,
Band gap correlation, systematics and implications for doping
The shallow-donor muonium states all dissociate below about 100 K (in BaO and rutile- as low as 10 K), with effective ionization energies varying from several meV to several tens of meV. The anomalous muonia show varying degrees of thermal stability and probably act as deep donors, dissociating below room temperature in HgO (125–225 K, 0.15–0.3 eV) but above room temperature for the vacancy-complex in (500–700 K, 0.9 eV). Normal muonium disappears only well above room temperature, with a
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