Elsevier

Physics Procedia

Volume 2, Issue 3, November 2009, Pages 827-833
Physics Procedia

Cathodoluminescence investigations of GaAs thin layers

https://doi.org/10.1016/j.phpro.2009.11.031Get rights and content
Under a Creative Commons license
open access

Abstract

In this work, we report the theoretical results of cathodoluminescence (CL) for GaAs layer. The simulation of the CL excitation and intensity is developed using 2-D model based on the electron beam energy dissipation and taking into account the effects of carrier diffusion, internal absorption and the recombination process in the semiconductors.

We have investigated the influence of the electron beam conditions (energy, current and beam diameter) and some physical parameters (absorption coefficient, gap energy) on the CL intensity. Results allow us particularly to predict the intensity evolution and shift of CL peak emitted near the fundamental energy gap as a function of the electron beam current and energy. A comparative study between simulated and experimental CL spectra at low temperature is realized.

PACS

78.60.Hk
72.20.Jv
78.20.Bh
78.20.e
78.55.Cr

Keywords

Cathodoluminescence
Charge carrier recombination
Theory models
Optical properties
GaAs

Cited by (0)