Abstract

We propose and describe a novel method called separation by bonding Si islands (SBSI) that can be used to form silicon-on-insulator (SOI) and isolation regions simultaneously. The Si islands are formed by selectively etching the SiGe layer of Si/SiGe stacked layers grown by chemical vapor deposition (CVD). Thin oxide layers are formed at the surface of the Si islands and the Si substrate by using thermal oxidation, and the Si islands are bonded to the Si substrate with the oxide layers. We obtained a uniform SOI layer and a smooth interface between the SOI and buried oxide (BOX) layers. The thicknesses of the SOI and BOX layers observed with cross-sectional transmission electron microscopy (TEM) were 18.2 and 23.5 nm, respectively.

Keywords: Silicon on insulator; Patterned SOI; SiGe; Selective etching

Pacs: 85.40.−e

Article Outline

1. Introduction

2. Separation by bonding Si islands

3. Selective etching characteristics of SiGe layer

4. Results and discussion for SBSI process

5. Conclusions

Acknowledgements

References